• 文献标题:   Lipid bilayer on wrinkled-interfaced graphene field effect transistor
  • 文献类型:   Article
  • 作  者:   INANC DO, CELEBI C, YILDIZ UH
  • 作者关键词:   bioelectronic interface, gfet, lipid bilayer formation, silicon dioxide encapsulation, atomic force microscopy, epitaxial growth
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X EI 1873-4979
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1016/j.matlet.2020.128998
  • 出版年:   2021

▎ 摘  要

This study describes lipid bilayer-based sensor interface on SiO2 encapsulated graphene field effect transistors (GFET). The SiO2 layer was utilized as a lipid compatible surface that drives bilayer formation. The two types of surface morphologies i) wrinkled morphology by thermal evaporation (TE) and ii) flat morphology by pulsed electron deposition (PED) were obtained. The sensing performance of wrinkled and flat interfaced-GFETs were investigated, pH sensitivity of wrinkled interfaced-GFETs were found to be ten fold larger than the flat ones. The enhanced sensitivity is attributed to thinning of the oxide layer by formation of wrinkles thereby facilitating electrostatic gating on graphene. We foresee that described wrinkled SiO2 interfaced-GFET holds promise as a cell membrane mimicking sensing platform for novel bioelectronic applications. (c) 2020 Published by Elsevier B.V.