▎ 摘　　要

The formation of large-area homogeneous graphene on a C-terminated SiC (000 (1) over bar) surface was achieved via decomposition of the SiC (000 (1) over bar) surface covered with an ultrathin but much more stable TiC layer than the reactive SiC(000 (1) over bar). By heating the SiC (000 (1) over bar) surface with a mixed powder of TiO2 and carbon at 1500-1550 degrees C in vacuum, an extremely homogeneous, epitaxial 0.75-nm-thick TiC(111) layer was grown on the SiC(000 (1) over bar) surface over a millimeter-scale area. Graphitization of the TiC-masked SiC surface led to the growth of high-quality graphene layers, which consist of TiC- and SiC-derived carbon. High-resolution transmission electron microscopy revealed the presence of disordered stacking of graphene layers on SiC through an amorphous layer at the interface. This unique method will promise further progress of relatively high carrier mobility of graphene formed on the SiC (000 (1) over bar) surface. DOI: 10.1103/PhysRevB.87.075431