▎ 摘　　要

Two-dimensional (2D) materials are promising for future electronic and optoelectronic devices. In particular, 2D material-based photodetectors have been widely studied because of their excellent photodetection performance. Owing to its excellent electrical and optical characteristics, 2D indium selenide (alpha-In2Se3) is a good candidate for photodetection applications. In addition, alpha-In2Se3 samples, including atom-thick alpha-In2Se3 layers, present ferroelectric properties. Herein, we report the fabrication and electrical and optoelectronic properties of multilayered graphene (Gr)/alpha-In2Se3/Gr-based ferroelectric semiconductor field-effect transistors (FeS-FETs). Furthermore, we discuss the physical mechanisms affecting electronic and optoelectronic transport in the Gr/alpha-In2Se3/Gr heterostructure. Large hysteresis was observed in the transfer characteristic curves and it was attributed to the ferroelectric polarization of MTL alpha-In2Se3 and carrier trapping-detrapping effects. The optoelectronic performance of the fabricated FeS-FETs depended on the ferroelectric properties of alpha-In2Se3 and can be easily tuned to achieve the maximum photoresponsivity and specific detectivity of 10 AW(-1) and 4.4 x 10(12) cmHz(1/2) W-1, respectively.