• 文献标题:   Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   KIM H, RENAULT O, TYURNINA A, GUILLET JF, SIMONATO JP, ROUCHON D, MARIOLLE D, CHEVALIER N, DIJON J
  • 作者关键词:   graphene, intercalation, photoemission microscopy, work function engineering, electrode
  • 出版物名称:   ULTRAMICROSCOPY
  • ISSN:   0304-3991 EI 1879-2723
  • 通讯作者地址:   Ecole Polytech Fed Lausanne
  • 被引频次:   2
  • DOI:   10.1016/j.ultramic.2015.06.012
  • 出版年:   2015

▎ 摘  要

Using laboratory X-ray photoelectron emission microscopy (XPEEM), we investigated the doping efficiency and thermal stability of iodine on as-grown graphene on Pt. After iodine adsorption of graphene in saturated vapor of I-2, monolayer and bilayer graphene exhibited work function of 4.93 eV and 4.87 eV, respectively. Annealing of the doped monolayer graphene at 100 degrees C led to desorption of hydrocarbons, which increased the work function of monolayer graphene by similar to 0.2 eV. The composition of the polyiodide complexes evolved upon a step-by-step annealing at temperatures from 100 degrees C to 300 degrees C while the work-function non-monotonically changed with decreasing iodine content. The iodine dopant was stable at relatively high temperature as a significant amount of iodine remained up to the annealing temperature of 350 degrees C. (C) 2015 Elsevier B.V. All rights reserved.