▎ 摘　　要

Freestanding thin-film transistors (TFTs) with multiple in-plane gates could meet increasing demands of mechanical flexibility and multifunctional integration. In this letter, freestanding flexible indium-zinc-oxide based TFTs with multi-gate structure and high electrical performance were reported. No obviously electrical degradation is observed under various mechanical stimuli due to the mechanical reinforcement effect of graphene oxide. Multifunctional operations including AND, OR gates and a Schmitt trigger are successfully demonstrated. More importantly, OR logic to AND logic transformation is also realized by a third modulatory terminal. Such freestanding TFTs are promising candidates for next-generation flexible smart electronic systems.