▎ 摘　　要

We propose a method to use gapped graphene as barriers to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated SiO2 substrate partly hydrogen-passivated. In particular, we use deposited ferromagnetic insulators as contacts which give rise to spin-dependent energy spectrum and transport properties. Furthermore, we upgrade this method to form two-dimensional quantum dot arrays, whose coupling strength between neighboring dots can be uniquely anisotropic. Compared to complexity of other approaches to form quantum dot in graphene, the setup suggested here is a promising candidate for practical applications.