• 文献标题:   A Growth Mechanism for Free-Standing Vertical Graphene
  • 文献类型:   Article
  • 作  者:   ZHAO J, SHAYGAN M, ECKERT J, MEYYAPPAN M, RUMMELI MH
  • 作者关键词:   vertical graphene, nucleation, stepflow, edge closure
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   IBS Ctr Integrated Nanostruct Phys
  • 被引频次:   98
  • DOI:   10.1021/nl501039c
  • 出版年:   2014

▎ 摘  要

We propose a detailed mechanism for the growth of vertical graphene by plasma-enhanced vapor deposition. Different steps during growth including nucleation, growth, and completion of the free-standing two-dimensional structures are characterized and analyzed by transmission electron microscopy. The nucleation of vertical graphene growth is either from the buffer layer or from the surface of carbon onions. A continuum model based on the surface diffusion and moving boundary (mass flow) is developed to describe the intermediate states of the steps and the edges of graphene. The experimentally observed convergence tendency of the steps near the top edge can be explained by this model. We also observed the closure of the top edges that can possibly stop the growth. This two-dimensional vertical growth follows a self-nucleated, step-flow mode, explained for the first time.