▎ 摘　　要

Integrated circuits (ICs) require robust and low-parasitic on-chip electrostatic discharging (ESD) protection. Compared to conventional in-Si PN-junction-based ESD protection structures, a novel above-IC graphene nanoelectromechanical system (NEMS) switch (gNEMS) ESD protection structure features low parasitic effects and superior current and heat handling capability. This work reports a systematic transient characterisation of gNEMS ESD switches by transmission line pulse (TLP) measurement for human body model ESD protection, revealing transient ESD discharging behaviours related to device dimensions and TLP pulse shapes. It provides practical design guidelines for using gNEMS switch as on-chip ESD protection for ICs. Unlike in-Si ESD protection structures, the new gNEMS ESD switch devices can be made in the back-end-of-line of ICs through three-dimensional heterogeneous integration.