▎ 摘　　要

The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 degrees C, the nucleation density of graphene increased from 124 to 448 mm(-2). The nucleation density of graphene increased from 124 to 192 mm(-2) with increasing current density from 0.03 to 0.07 A/cm(-2). Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of mu(h) = similar to 4041 cm(2)V(-1)s(-1) and mu(e) = similar to 2580 cm(2)V(-1)s(-1) at room temperature.