▎ 摘　　要

The advance of graphene-based nanoelectronics has been hampered due to the difficulty in producing single- or few-layer graphene over large areas. We report a simple, scalable, and cost-efficient method to prepare graphene using methane-based CVD on nickel films deposited over complete Si/SiO2 wafers. By using highly diluted methane, single- and few-layer graphene were obtained, as confirmed by micro-Raman spectroscopy. In addition, a transfer technique has been applied to transfer the graphene film to target substrates via nickel etching. FETs based on the graphene films transferred to Si/SiO2 substrates revealed a weak p-type gate dependence, while transferring of the graphene films to glass substrate allowed its characterization as transparent conductive films, exhibiting transmittance of 80% in the visible wavelength range.