• 文献标题:   Controlled and Stabilized Light-Matter Interaction in Graphene: Plasmonic Film with Large-Scale 10-nm Lithography
  • 文献类型:   Article
  • 作  者:   HU YW, KUMAR P, XUAN Y, DENG BW, QI MH, CHENG GJ
  • 作者关键词:  
  • 出版物名称:   ADVANCED OPTICAL MATERIALS
  • ISSN:   2195-1071
  • 通讯作者地址:   Purdue Univ
  • 被引频次:   6
  • DOI:   10.1002/adom.201600201
  • 出版年:   2016

▎ 摘  要

Graphene-plasmonic metal nanostructures have great potential as optical metamaterials with strong light-matter interactions for applications in energy harvesting, biochemical sensing, and plasmonics. Currently, large-scale fabrication of graphene-plasmonic hybrid systems have the following bottlenecks to realization of their full potential: 1) the geometry of metal nanostructures is not well controlled, 2) the substrates are rigid, and 3) low chemical and thermal stability of plasmonic metal nanostructures. Top-down fabrication of a free-standing hybrid film is demonstrated with graphene veiling for flexible-substrate-supported engineered plasmonic nanoarrays. Large-scale graphene-plasmonic nanoengineered hybrid structures with the capability to generate large optical-field enhancement, such as ultrasharp 3D pyramids, 10-nm V-grooves, and nanotrenches (10-100 nm), are nanoimprinted from physical-vapor-deposited nanocrystalline thin films on flexible substrates by laser-shock-induced 10-nm lithography. Anisotropic light-matter interactions with tunable field enhancement, hot electron transfer at the graphene-metal interface, and optical reflectance in the graphene are shown in a sub-100-nm nanoengineered metal structure. The application of such hybrid films is demonstrated in trace-level direct detection of antibiotics from their waste containers. This hybrid structure has excellent stability in a reactive environment (sulfur) and at elevated temperatures (ca. 300 degrees C). These 10-nm lithography enabled graphene-plasmonic nanosystems will stimulate development of many novel devices in a hybrid, tunable hot-carrier-surface plasmonic concept.