• 文献标题:   Magnetoplasma Excitations and the Effect of Electron and Hole Velocity Renormalization in Free-Hanging Graphene Studied by Raman Scattering
  • 文献类型:   Article
  • 作  者:   KUKUSHKIN VI, KIRPICHEV VE, KUKUSHKIN IV
  • 作者关键词:  
  • 出版物名称:   JETP LETTERS
  • ISSN:   0021-3640 EI 1090-6487
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   1
  • DOI:   10.1134/S0021364016130129
  • 出版年:   2016

▎ 摘  要

The properties of plasma and magnetoplasma excitations in free-hanging graphene have been studied for the first time by Raman scattering. In addition to single-particle excitations associated with transitions between empty Landau levels of electrons and holes, collective plasma and magnetoplasma excitations in the system of electrons ( and holes) of various densities have been discovered for the first time. Hybridization of plasma and cyclotron modes corresponding to the Kohn law has been shown to occur in the limit of high filling factors, which allows measuring directly the plasma and cyclotron energies. The dependence of the electron and hole velocities on their density has been investigated via the magnetic-field dependence of the cyclotron energy in free-hanging graphene. The effect of strong renormalization of the electron and hole dispersion relations seen as an increase in the velocity ( by 40-50%) with a decrease in the charge-carrier density to 10(11) cm(-2) has been discovered. The charge-carrier density dependences of the widths of magnetoplasma resonances in free-hanging graphene and graphene lying on a silicon dioxide surface have been measured and shown to be at least 3.5 and 14.8 meV, respectively.