• 文献标题:   Chemically Modulated Graphene Diodes
  • 文献类型:   Article
  • 作  者:   KIM HY, LEE K, MCEVOY N, YIM C, DUESBERG GS
  • 作者关键词:   graphene schottky diode, chemical doping of graphene, chemical sensor, ideality factor, schottky barrier height
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Trinity Coll Dublin
  • 被引频次:   96
  • DOI:   10.1021/nl400674k
  • 出版年:   2013

▎ 摘  要

We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocompatible sensors.