▎ 摘　　要

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a through understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer lent h scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport, and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices fir low- and high-end technology applications.