• 文献标题:   Cooling of photoexcited carriers in graphene by internal and substrate phonons
  • 文献类型:   Article
  • 作  者:   LOW T, PEREBEINOS V, KIM R, FREITAG M, AVOURIS P
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   IBM TJ Watson Res Ctr
  • 被引频次:   71
  • DOI:   10.1103/PhysRevB.86.045413
  • 出版年:   2012

▎ 摘  要

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote ( substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady-state carrier temperatures and photocarrier densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics.