• 文献标题:   Evidence of Nanocrystalline Semiconducting Graphene Monoxide during Thermal Reduction of Graphene Oxide in Vacuum
  • 文献类型:   Article
  • 作  者:   MATTSON EC, PU HH, CUI SM, SCHOFIELD MA, RHIM S, LU GH, NASSE MJ, RUOFF RS, WEINERT M, GAJDARDZISKAJOSIFOVSKA M, CHEN JH, HIRSCHMUGL CJ
  • 作者关键词:   graphene oxide, thermal reduction, in situ electron diffraction, infrared spectroscopy, density functional theory, nanocrystal, semiconductor
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Univ Wisconsin
  • 被引频次:   60
  • DOI:   10.1021/nn203160n
  • 出版年:   2011

▎ 摘  要

As silicon-based electronics are reaching the nanosize limits of the semiconductor roadmap, carbon-based nanoelectronics has become a rapidly growing field, with great interest in tuning the properties of carbon-based materials. Chemical functionalization Is a proposed route, but syntheses of graphene oxide (G-O) produce disordered, nonstoichiometric materials with poor electronic properties. We report synthesis of an ordered, stoichiometric, solid-state carbon oxide that has never been observed in nature and coexists with graphene. Formation of this material, graphene monoxide (GMO), is achieved by annealing multilayered G-O. Our results indicate that the resulting thermally reduced G-O (TRG-O) consists of a two-dimensional nanocrystalline phase segregation: unoxidized graphitic regions are separated from highly oxidized regions of GMO. GMO has a quasi-hexagonal unit cell, an unusually high 1:1 0:C ratio, and a calculated direct band gap of similar to 0.9 eV.