▎ 摘　　要

A quantum transport simulator based on a self-consistent solution of the Schrodinger equation within non-equilibrium Green's function formalism and 2D Poisson equation for a bilayer graphene nanoribbon (bilayer GNR) field-effect transistor (FET) has been developed to examine the ballistic performance of a device. It is found that the lateral confinement employed in bilayer graphene to form the bilayer GNR largely increases the ON/OFF current (ION IOFF) ratios of FET without significantly degrading its ON current (ION). On the other hand, the interlayer coupling considerably decreases the confinement-induced energy gap of the bilayer GNR and largely increases the ION of the narrow bilayer GNR FET at the cost of lower ION IOFF ratios in comparison with the GNR FET.