▎ 摘　　要

To increase the performance of the metal-semiconductor (MS) structure, MS and pure polyvinyl-pyrrolidine (PVP), Gr, (ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed on the p-Si substrate in same conditions and impedance-measurements of them were performed in frequency range of 100 Hz-1 MHz at 1.5 V. These results show that the real/imaginary components of complex-dielectric (epsilon*), loss-tangent (tan delta), ac conductivity (sigma(ac)), and complex-electric modulus (M*) are quite function of frequency at lower frequencies due the surface states (N-ss), their relaxation-time (tau), series-resistance (R-s), interlayer, and the surface/dipole-polarization. The value of conductivity for all the samples is almost becomes constant for low-frequencies and then it starts to increase for high-frequencies range due to the increment of eddy current and energy-loss resulting in decreasing the R-s. The M ''-M ' graph shows good semi-circular Cole-Cole curve for MPS structures with the Gr, (ZnTiO3) and (Gr-ZnTiO3) doped PVP interlayer which are represents the polarization process. The dielectric value of all MPS structures was found greater than that of MS one, but the tan delta value was lower. It is an evident that the used doped PVP interlayers leads to increase the energy storage capacity and reduce the energy losses.