• 文献标题:   Epitaxial growth of large-area bilayer graphene on Ru(0001)
  • 文献类型:   Article
  • 作  者:   QUE YD, XIAO WD, FEI XM, CHEN H, HUANG L, DU SX, GAO HJ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   18
  • DOI:   10.1063/1.4868021
  • 出版年:   2014

▎ 摘  要

Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moire pattern with a periodicity of similar to 21.5 nm and a mixture of AA-and AB-stacking. The root 3 x root 3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized p-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene. (C) 2014 AIP Publishing LLC.