• 文献标题:   Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
  • 文献类型:   Article
  • 作  者:   HOLOVCHENKO A, DUGAY J, GIMENEZMARQUES M, TORRESCAVANILLAS R, CORONADO E, VAN DER ZANT HSJ
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Delft Univ Technol
  • 被引频次:   33
  • DOI:   10.1002/adma.201600890
  • 出版年:   2016

▎ 摘  要

The charge transport properties of SCO [Fe(Htrz)(2)(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.