▎ 摘　　要

An ecofriendly wet-chemical methodology for the transfer of chemical vapor deposition-grown, two-dimensional (2D) graphene layers onto desired surfaces is proposed and demonstrated by transferring the graphene monolayers (GMLs) onto Si/SiO2 substrates. The quality and purity of transferred graphene layers along with their uniformity and electrical characteristics were examined. Furthermore, the areal uniformity of the transferred layers is explored by fabricating the devices with a configuration of graphene/insulator/metal (GIM). The transferred GMLs over Si/SiO2 substrates exhibited good uniformity with high chemical purity along with excellent electrical characteristics. The GIM-based devices fabricated over planar substrates showed high conductivity and low leakage current density. Based on these demonstrated outcomes, it is emphasized that the proposed methodology can be adopted for the transfer of any 2D materials irrespective of their size by avoiding chemical exposure and failure of the fabrication process that are the major hurdles in the conventional approach. (C) 2021 Elsevier Ltd. All rights reserved.