• 文献标题:   Cu2ZnSnS4 QDs anchored 2-D few-layer graphene bridge enhanced photo induced charge carrier transport behavior for high efficient kesterite photovoltaic cell
  • 文献类型:   Article
  • 作  者:   DAS S, ALAM I, MAHANANDIA P
  • 作者关键词:   few layer graphene sheet flgs, electrochemical method, cu2znsns4 czts, quantum dots qds, photovoltaic cell, short circuit current density j sc, power conversion efficiency pce
  • 出版物名称:   OPTICAL MATERIALS
  • ISSN:   0925-3467 EI 1873-1252
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.optmat.2022.112775 EA AUG 2022
  • 出版年:   2022

▎ 摘  要

Quaternary chalcogenide Cu2ZnSnS4 (CZTS) is a promising absorber for photovoltaic cell application due to its excellent properties like natural abundancy, non-toxic material incorporation, high absorption coefficient similar to 10(4) cm(-1) and tuneable band gap energy of 1.4-1.6 eV. However, still there is a huge gap of efficiency between the market oriented Si based photovoltaic device and kesterite device as it is hindered by poor charge carrier mobility. To improve the carrier mobility of semiconducting CZTS material, incorporation of highly conducting material like graphene would be helpful. The incorporation of graphene into CZTS enhances the separation and transfer of charge carriers in an efficient way inhibiting recombination. In this present work, the photovoltaic performance of solution processed single phase kesterite CZTS QDs anchored on electro-chemically prepared few-layer graphene sheet (FLGS) as active layer has been reported. The QD decoration has been carried out by a simple, scalable, environment friendly solution based approach without surface modifications and post-sulphurization treatment. The prepared hybrid structure demonstrates significant increase in photocurrent and optical absorbance indicates the fast charge carrier transport behaviour. The power conversion efficiency (PCE) of fabricated hybrid CZTS QDs-FLGS photovoltaic cell with device configuration of Mo/CZTS QDs-FLGS/CdS/ZnO/Al approached similar to 7.64% (for 2.5 wt% FLGS loading) with short circuit current density (J(sc)) of 19.07 mAcm(-2), superior to individual CZTS QDs (similar to 6.11% PCE and 15.6% J(sc)).