▎ 摘　　要

Composite films consisting of fluorinated graphene flakes with vanadium oxide (V2O5) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V2O5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 10(6)-10(9) for films 20-50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 x 10(3) switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign-alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.