• 文献标题:   Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review
  • 文献类型:   Review
  • 作  者:   PRADEEPKUMAR A, GASKILL DK, IACOPI F
  • 作者关键词:   epitaxial graphene, sic, 3csic on si, substrate interaction, carrier concentration, mobility, intercalation, buffer layer, surface functionalization
  • 出版物名称:   APPLIED SCIENCESBASEL
  • ISSN:  
  • 通讯作者地址:   Univ Technol Sydney
  • 被引频次:   0
  • DOI:   10.3390/app10124350
  • 出版年:   2020

▎ 摘  要

The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.