• 文献标题:   Terahertz-Wave Generation Using Graphene: Toward New Types of Terahertz Lasers
  • 文献类型:   Article
  • 作  者:   OTSUJI T, TOMBET SB, SATOU A, RYZHII M, RYZHII V
  • 作者关键词:   carrierphonon interaction, current injection, graphene, solidstate laser, terahertz thz
  • 出版物名称:   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
  • ISSN:   1077-260X EI 1558-4542
  • 通讯作者地址:   Tohoku Univ
  • 被引频次:   42
  • DOI:   10.1109/JSTQE.2012.2208734
  • 出版年:   2013

▎ 摘  要

This paper reviews recent advances in terahertz-wave generation in graphene toward the creation of new types of terahertz lasers. First, fundamental basis of the optoelectronic properties of graphene is introduced. Second, nonequilibrium carrier relaxation or recombination dynamics in optically or electrically pumped graphene is described to introduce a possibility of negative dynamic conductivity in a wide terahertz range. Third, recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described. Fourth, unique terahertz dynamics of the 2-D plasmons in graphene are described. Finally, the advantages of graphene materials and devices for terahertz-wave generation are summarized.