▎ 摘　　要

We show SiC substrate phonon-induced surface plasmon polariton (SPP) formation in epitaxial graphene grown on 4H-SiC, in SiC's restrahlen band (8-10 mu m). By fitting measurement to theory, we extract thickness, momentum scattering time (tau), sheet carrier density (n(s)), and estimate carrier mobility. By showing that tau proportional to 1 root n(s), we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. SPP formation finds application in nanophotonic devices for optical computing because of graphene's unique plasmonic properties. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3666069]