• 文献标题:   Linear magnetoresistance in monolayer epitaxial graphene grown on SiC
  • 文献类型:   Article
  • 作  者:   CHUANG CS, YANG YF, ELMQUIST RE, LIANG CT
  • 作者关键词:   graphene, magnetoresistance, carbon material, electrical propertie
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X EI 1873-4979
  • 通讯作者地址:   NIST
  • 被引频次:   6
  • DOI:   10.1016/j.matlet.2016.03.033
  • 出版年:   2016

▎ 摘  要

We have observed classical linear magnetoresistance (LMR), which persists to room temperature, in clean monolayer epitaxial graphene grown on SiC. Such results are consistent with the resistor network model based on density inhomogeneity in a disordered two-dimensional system, though the observed LMR is non-saturating possibly due to formation of a quantum Hall-like state beyond the highest measurement magnetic field. Given the prospect of epitaxial graphene in high-frequency transistors, our experimental data pave the way for integration of magnetic sensing devices with high-frequency devices based on wafer-scale graphene. Published by Elsevier B.V.