▎ 摘　　要

This paper deals with a luminescent layer applied on a commercial Silicon (Si) solar cell by spin coating of an aqueous solution of graphene quantum dots (GQDs), synthesized by the hydrothermal method at 200 degrees C for 24 h. The GQDs layer, acted as a luminescent down-shifting (LDS) layer, causes a relative enhancement in the short circuit current density (J(SC)) of me-Si and c-Si solar cells up to 5.14% and 6.82%, respectively. Remarkable relative enhancements in J(SC) under UV illumination showed that the LDS layer increases the J(SC) by downshifting effect; Diffuse reflectance spectroscopy (DRS) of the solar cells with and without the LDS layers showed that the GQD filled LDS layers do not have a considerable effect on the light reflection from the Si solar cell to affect the J(SC). (C) 2020 Elsevier B.V. All rights reserved.