▎ 摘　　要

Chemical vapor deposition (CVD) reaction from metal particles to produce graphene has seldom been reported so far. In this paper, the CVD growth of graphene was conducted under ambient pressure without a dedicated stage for reduction treatment. Interestingly, copper nanoparticles supported on MgO prepared by simple impregnation were able to efficiently catalyze graphene. Quantification of the prepared graphene was carefully conducted. For the optimized conditions, 1000 degrees C for 30 min, high content of graphene (up to 27 at.%) could be produced. Our method shows high efficiency and growth rate of graphene, produced at much lower cost compared to the existing methods.