▎ 摘　　要

Stable, controlled, and patternable doping is the cornerstone of the microelectronics industry, and will be necessary for the next generation semiconductors. The lack of a suitable doping scheme is among the challenges that graphene faces as a candidate future electronic material. Here, we explore the use of modulation doping, where charge carriers are transferred from a doped wider band gap material to an undoped narrower band gap one, to achieve stable, controlled, and patternable doping of graphene in a complementary metal-oxide-semiconductor (CMOS) compatible structure. Numerical calculation shows that such devices exhibit CMOS-like characteristics. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3556587]