• 文献标题:   Reduced Water Vapor Transmission Rate of Graphene Gas Barrier Films for Flexible Organic Field-Effect Transistors
  • 文献类型:   Article
  • 作  者:   CHOI K, NAM S, LEE Y, LEE M, JANG J, KIM SJ, JEONG YJ, KIM H, BAE S, YOO JB, CHO SM, CHOI JB, CHUNG HK, AHN JH, PARK CE, HONG BH
  • 作者关键词:   graphene barrier, water vapor transmittance rate, ofet, bending cycle
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   49
  • DOI:   10.1021/acsnano.5b01161
  • 出版年:   2015

▎ 摘  要

Preventing reactive gas species such as oxygen or water is important to ensure the stability and durability of organic electronics. Although inorganic materials have been predominantly employed as the protective layers, their poor mechanical property has hindered the practical application to flexible electronics. The densely packed hexagonal lattice of carbon atoms in graphene does not allow the transmission of small gas molecules. In addition, its outstanding mechanical flexibility and optical transmittance are expected to be useful to overcome the current mechanical limit of the inorganic materials. In this paper, we reported the measurement of the water vapor transmission rate (WVTR) through the 6-layer 10 x 10 cm(2) large-area graphene films synthesized by chemical vapor deposition (ND). The WVTR was measured to be as low as 10(-4) g/m(2). day initially, and stabilized at similar to 0.48 g/m(2). day, which corresponds to 7 times reduction in WVTR compared to bare polymer substrates. We also showed that the graphene-passivated organic field-effect transistors (OFETs) exhibited excellent environmental stability as well as a prolonged lifetime even after 500 bending cycles with strain of 2.3%. We expect that our results would be a good reference showing the graphene's potential as gas barriers for organic electronics.