• 文献标题:   Possible high-temperature superconducting state with a d plus id pairing symmetry in doped graphene
  • 文献类型:   Article
  • 作  者:   PATHAK S, SHENOY VB, BASKARAN G
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Indian Inst Sci
  • 被引频次:   80
  • DOI:   10.1103/PhysRevB.81.085431
  • 出版年:   2010

▎ 摘  要

Motivated by a suggestion in our earlier work [G. Baskaran, Phys. Rev. B 65, 212505 (2002)], we study electron correlation driven superconductivity in doped graphene where on-site correlations are believed to be of intermediate strength. Using an extensive variational Monte Carlo study of the repulsive Hubbard model and a correlated ground state wave function, we show that doped graphene supports a superconducting ground state with a d+id pairing symmetry. We estimate superconductivity reaching room temperatures at an optimal doping of about 15%-20%. Our work suggests that correlations can stabilize superconductivity even in systems with intermediate coupling.