▎ 摘　　要

A drift-diffusion-based simulation and Monte Carlo simulation with electron-phonon and electron-electron scatterings are performed to extract the threshold voltage characteristics and intrinsic delay of field-effect transistors (FETs) composed of graphene with an energy band gap owing to atomic site potential asymmetry. On the basis of the deduced graphene FET characteristics, the delays of complementary graphene FET inverters are predicted for gate lengths down to 10 nm. The calculations suggest a sub-picosecond delay in 10nm gate inverters. The problem of fully using the high electron velocity in graphene is addressed. (C) 2011 The Japan Society of Applied Physics