▎ 摘　　要

In this study, graphene field effect transistor arrays were fabricated, using solid-phase growth of graphene on a SiO2/Si substrate. Transfer-free fabrication was made possible by the fact that the graphene was grown not on a metal catalyst film, but on an insulating SiO2 substrate. Electrical isolation process was also eliminated by employing a patterned growth of graphene. The resultant device exhibited satisfactorily good current-voltage characteristics, with a mobility of 590 cm(2)/V s. (C) 2013 AIP Publishing LLC.