▎ 摘　　要

Using Raman spectral-mapping, we investigated in situ temperature dependence (100-300 K) of strain and doping of isotopically labelled double-layer graphene, which allows us to simultaneously and independently follow the strain and doping in both layers of the double layer. We find that the strain in both layers of the double-layer graphene is almost the same and becomes larger when the temperature is decreased. The bottom graphene layer, in contact with the Si/SiO2 substrate has a stronger doping than the top graphene layer which is in contact with the graphene bottom layer. We also observed that the spatial distribution of the temperature-induced strain and doping is not homogeneously distributed within the substrate. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim