• 文献标题:   H-2-Dependent Carbon Dissolution and Diffusion-Out in Graphene Chemical Vapor Deposition Growth
  • 文献类型:   Article
  • 作  者:   HU BS, JIN Y, GUAN DJ, LUO ZT, SHANG B, FANG QR, RUAN HB
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447 EI 1932-7455
  • 通讯作者地址:   Chongqing Univ
  • 被引频次:   12
  • DOI:   10.1021/acs.jpcc.5b07127
  • 出版年:   2015

▎ 摘  要

Highlighting the roles of H-2 on the carbon dissolution and diffusion-out unit steps in the metal substrate is highly imperative to constitute a whole puzzle elucidating how the H-2 affects the graphene chemical vapor deposition (CVD) growth, taking into account that the effects of H-2, on the surface process have been intensively emphasized. In this article, we designed a series of graphene growth experiments by introducing the H-2 in the individual unit step on the Cu and Co films as a comparison due to their distinctively intrinsic carbon solubility. We investigated the effects of H-2 on the crystallographic structure, surface morphology, and chemical environment of metal substrates, and the thickness and quality of as-grown graphene films. We also established the theoretical models to monitor the interaction between carbon and metal atoms with and without H-2. Our results demonstrate that the H-2 predissolution could suppress the carbon dissolution in the Cu film and enhance the diffusion-out of dissolved carbon atoms, whereas in the Co film the converse would occur.