▎ 摘　　要

Ultraviolet (UV) photodetectors were fabricated using the wet spin-coating for ZnO quantum dots (QDs) and the transfer method for the graphene sheet. High-resolution transmission electron microscopy images showed that the ZnO QDs were uniformly distributed between the voids of the surface circumferences on the graphene layers. Current-voltage measurements on the UV photodetector at 300 K showed that the ratio of the photocurrent to the dark current was about 1.1 x 10(4). The rise and the decay times of the UV photodetector were approximately 2 and 1 s, respectively. The photoresponse mechanisms are described on the basis of the experimental results. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776651]