▎ 摘　　要

Developing an alternative method for fabricating microscale graphene patterns that overcomes the obstacles of organic contamination, linewidth resolution, and substrate damaging is paramount for applications in optoelectronics. Here we propose to pattern chemical vapor deposition grown graphene film through a stencil mask by magnetic-assisted ultraviolet (UV) ozonation under irradiation of a xenon excimer lamp. In this process, the paramagnetic oxygen molecules and photochemically generated oxygen radicals are magnetized and attracted in an inhomogenous external magnetic field. As a consequence, their random motions convert into directional, which can greatly modify or enhance the quality of graphene patterns. Using a ferromagnetic steel mask, an approximately vertical magnetic-field-assisted UV ozonation (B-Z = 0.31 T-i, del B-Z = 90 T center dot m(-1)) has a capability of patterning graphene microstructures with a line width of 29 mu m and lateral under-oxidation less than 4 mu m. Our approach is applicable to patterning graphene field-effect transistor arrays, and it can be a promising solution toward resist-free, substrate non-damaging, and cost effective microscale patterning of graphene film.