• 文献标题:   Analytical investigation of ion-sensitive field effect transistor based on graphene
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   AKBARI E, NABIPOUR N, HADAVI SM, NILASHI M
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS
  • ISSN:   0957-4522 EI 1573-482X
  • 通讯作者地址:   Duy Tan Univ
  • 被引频次:   0
  • DOI:   10.1007/s10854-020-03201-4
  • 出版年:   2020

▎ 摘  要

The purpose of this analytical research is the capability of sensing different K+concentrations by the ion-sensitive field effect transistor (ISFET) based on graphene. By gate voltage variation values, K+ion concentration in the electrolyte can be measured, since there are interactions between the K+and the gate ions. We have applied the adaptive neuro-fuzzy inference system (ANFIS) model to predict the current-voltage (I-V) characteristic which has resulted in satisfactory performance.