• 文献标题:   Qualitative Analysis of Growth Parameters for PECVD Based Low Temperature Synthesis of Graphene Using Design of Experiments
  • 文献类型:   Article
  • 作  者:   NARULA U, TAN CM
  • 作者关键词:   design of experiment, low temperature graphene synthesi, optimized growth parameter, plasma, raman
  • 出版物名称:   FRONTIERS IN MATERIALS
  • ISSN:   2296-8016
  • 通讯作者地址:   Chang Gung Univ
  • 被引频次:   0
  • DOI:   10.3389/fmats.2018.00043
  • 出版年:   2018

▎ 摘  要

Determination of key factors and parameters is necessary to design any process when number of factors are large. Design of Experiments technique is an important statistical tool to serve the purpose. This work demonstrates a method to perform qualitative analysis in order to determine cardinal control factors for Graphene growth at low temperature values using Fractional Factorial design. Graphene is synthesized using Plasma Enhanced Chemical Vapor Deposition (PECVD) method in this work. Attribute Response Analysis suggests that Graphene growth temperature, deposition time and RF power are important controlling factors. This is verified by Graphene growth using the predicted recipe.