▎ 摘　　要

We study the influence of edge defects and the downscaling of graphene nanoribbon (GNR) width (W) on the ON- and OFF-state conductance (G(ON) and G(OFF)) and the ON-OFF conductance ratio (G(ON)/G(OFF)). The averaged properties and the variability are explored by simulating ensembles of defected GNRs with various percentages of edge defects using atomistic quantum transport simulations. We find that even 10% edge defects decrease G(ON) by at least 40%, even in the widest simulated GNRs, and that G(ON) scales as similar to W-2 for W > 3.2 nm and similar to W-9 for W < 1.8 nm. The relative variability of G(ON) (3 sigma compared with average) increases from similar to 30% to similar to 1000% when the width is scaled from 4.8 to 1.1 nm. Furthermore, while its variability can reach orders of magnitude, we find that there exists the optimum nanoribbon width range between 1.8 and 3.3 nm in terms of G(ON)/G(OFF) in GNRs with edge defects.