▎ 摘　　要

Graphene oxide (GO) potentially has applications in vacuum microelectronic devices for realization of field emission displays. Graphene and its derivatives are expected to be efficient field emitters due to their unique electrical properties. However, the flat sheet structure of graphene or GO allows electron field emission only from the edges of graphene and GO nanosheets. In order to extract maximum field emission current density at lower applied voltage from the GO nanosheets, we supported and stretched them on sharp tips of silicon nanowires (SiNWs). Highly efficient and stable field emission with low turn-on field was observed for these SiNW-GO heterostructures. The sharp protrusions created by stretching of the GO nanosheets on SiNWs locally enhance the electric field and thus enhance the field emission characteristics. The dominant use of silicon in electronic devices makes this approach robust for the development of field emission devices using graphene based field emitters.