▎ 摘　　要

We propose a novel method to create vacancy defects on MoS2 structures. The method is similar to a potato stamp process, which involves creating vacancy defects on a graphene layer and stamping to the MoS2 surface. On the basis of nudged elastic band and density functional theory calculations, we predict that sulfur atoms on the surface will diffuse into the vacancy sites of the graphene layer. Separation of the graphene layer will carry away diffused sulfur atoms, leaving the MoS2 surface with sulfur vacancy defects. We carried out molecular dynamics simulations with the ReaxFF reactive force field to test the potato stamp concept and then functionalized the MoS2 surface defects with epoxy molecules. We observed dissociation of epoxy molecules at the vacancy site, in which the exposed metal atoms had catalytic activity.