• 文献标题:   Low-field carrier transport properties in biased bilayer graphene
  • 文献类型:   Article
  • 作  者:   HU B
  • 作者关键词:   biased bilayer graphene, boltzmann transport equation, random phase approximation, surface polar phonon scattering
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   1
  • DOI:   10.1016/j.physe.2014.03.022
  • 出版年:   2014

▎ 摘  要

Based on a semiclassical Boltzmann transport equation in random phase approximation, we develop a theoretical model to understand low field carrier transport in biased bilayer graphene, which Lakes into account the charged impurity scattering, acoustic phonon scattering, and surface polar phonon scattering as three main scattering mechanisms. The surface polar optical phonon scattering of carriers in supported bilayer graphene is thoroughly studied using the Rode iteration method. By considering the metal-BLG contact resistance as the only one free fitting parameter, we find that the can density dependence of the calculated total conductivity agrees well with that observed in experiment under different temperatures. The conductivity results also suggest that in high carrier density range, the metal-BLG contact resistance can be a significant factor in determining the BLG conductivity at low temperature, and both acoustic phonon scattering and surface polar phonon scattering play important roles at higher temperature, especially for BLG samples with a low doping concentration, which can compete with charged impurity scattering. (C) 2014 Elsevier By. All rights reserved,