• 文献标题:   Gate-defined Josephson junctions in magic-angle twisted bilayer graphene
  • 文献类型:   Article
  • 作  者:   DE VRIES FK, PORTOLES E, ZHENG GL, TANIGUCHI T, WATANABE K, IHN T, ENSSLIN K, RICKHAUS P
  • 作者关键词:  
  • 出版物名称:   NATURE NANOTECHNOLOGY
  • ISSN:   1748-3387 EI 1748-3395
  • 通讯作者地址:  
  • 被引频次:   28
  • DOI:   10.1038/s41565-021-00896-2 EA MAY 2021
  • 出版年:   2021

▎ 摘  要

In situ electrostatic control of two-dimensional superconductivity(1) is commonly limited due to large charge carrier densities, and gate-defined Josephson junctions are therefore rare(2,3). Magic-angle twisted bilayer graphene (MATBG)(4-8) has recently emerged as a versatile platform that combines metallic, superconducting, magnetic and insulating phases in a single crystal(9-14). Although MATBG appears to be an ideal two-dimensional platform for gate-tunable superconductivity(9,11,13), progress towards practical implementations has been hindered by the need for well-defined gated regions. Here we use multilayer gate technology to create a device based on two distinct phases in adjustable regions of MATBG. We electrostatically define the superconducting and insulating regions of a Josephson junction and observe tunable d.c. and a.c. Josephson effects(15,16). The ability to tune the superconducting state within a single material circumvents interface and fabrication challenges, which are common in multimaterial nanostructures. This work is an initial step towards devices where gate-defined correlated states are connected in single-crystal nanostructures. We envision applications in superconducting electronics(17,18) and quantum information technology(19,20).