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  • 文献标题:   High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates
  • 文献类型:   Article, Proceedings Paper
  • 作　　者:   DAGHER R, MATTA S, PARRET R, PAILLET M, JOUAULT B, NGUYEN L, PORTAIL M, ZIELINSKI M, CHASSAGNE T, TANAKA S, BRAULT J, CORDIER Y, MICHON A
  • 作者关键词:   aln, annealing, atomic force microscopy, chemical vapor deposition, graphene, growth, raman spectroscopy, xray photoemission spectroscopy
  • 出版物名称:   PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE
  • ISSN:   1862-6300 EI 1862-6319
  • 通讯作者地址:   Univ Cote Azur
  • 被引频次:   5
  • DOI:   10.1002/pssa.201600436
  • 出版年:   2017

▎ 摘　　要

Graphene and AlN are promising materials, interesting to combine together. In this study, we will present first results for direct growth of graphene on bulk AlN and on AlN templates using chemical vapor deposition, including the annealing of these substrates at high temperatures. Atomic force microscopy (AFM) enabled us to study the evolution of the AlN surface morphology after annealing and growth. Few-layer graphene deposition is demonstrated on the basis of X-ray photoemission and Raman spectroscopy. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim