• 文献标题:   Tunable Spin Injection in High-Quality Graphene with One-Dimensional Contacts
  • 文献类型:   Article
  • 作  者:   GUAROCHICOMOREIRA VH, SAMBRICIO JL, OMARI K, ANDERSON CR, BANDURIN DA, TOSCANOFIGUEROA JC, NATERACORDERO N, WATANABE K, TANIGUCHI T, GRIGORIEVA IV, VERAMARUN IJ
  • 作者关键词:   hbn, graphene, spin injection, 1d contact, van der waals device
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1021/acs.nanolett.1c03625
  • 出版年:   2022

▎ 摘  要

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tunable spin signal in fully encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130 000 cm (2) V-1 s(-1) and spin diffusion lengths approaching 20 mu m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.