• 文献标题:   Vertically aligned ZnO nanostructures grown on graphene layers
  • 文献类型:   Article
  • 作  者:   KIM YJ, LEE JH, YI GC
  • 作者关键词:   graphene, iivi semiconductor, mocvd, nanofabrication, nanostructured material, nucleation, photoluminescence, semiconductor growth, surface morphology, vapour phase epitaxial growth, wide band gap semiconductor, zinc compound
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   138
  • DOI:   10.1063/1.3266836
  • 出版年:   2009

▎ 摘  要

We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy.