• 文献标题:   Low-Voltage Organic Electronics Based on a Gate-Tunable Injection Barrier in Vertical graphene-organic Semiconductor Heterostructures
  • 文献类型:   Article
  • 作  者:   HLAING H, KIM CH, CARTA F, NAM CY, BARTON RA, PETRONE N, HONE J, KYMISSIS I
  • 作者关键词:   graphene, organic semiconductor, thin film transistor, low voltage electronic
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Columbia Univ
  • 被引频次:   55
  • DOI:   10.1021/nl5029599
  • 出版年:   2015

▎ 摘  要

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C-60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.