• 文献标题:   Interface-controlled growth of organic semiconductors on graphene
  • 文献类型:   Article
  • 作  者:   MATHEW J, EMIN S, PAVLICA E, VALANT M, BRATINA G
  • 作者关键词:   graphene, pdif, atomic force microscopy, transmission electron microscopy
  • 出版物名称:   SURFACE SCIENCE
  • ISSN:   0039-6028 EI 1879-2758
  • 通讯作者地址:   Univ Nova Gorica
  • 被引频次:   3
  • DOI:   10.1016/j.susc.2017.05.005
  • 出版年:   2017

▎ 摘  要

We have studied submonolayer coverages of N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) on mechanically exfoliated graphene transferred onto SiO2 substrates. Our atomic force microscopy (AFM) data show that PDIF-CN2 forms irregularly-shaped 1.4 nm-high islands. From the selected area diffraction performed with transmission electron microscope (TEM) we conclude that this height corresponds to pi-pi stacks of molecules, which are inclined for 43 degrees relative to the graphene surface. AFM also showed complete absence of PDIF-CN2 on single-layer graphene (SLG). Electric force microscopy revealed a marked difference in surface charge density between a single-layer graphene and bilayer graphene, with a higher surface charge on SLG than on the bilayer graphene. We associate this behavior with p-type doping of graphene due to the electrostatic dipole induced by the molecular water layer present at the graphene/SiO2 interface. The crucial role of the graphene/SiO2 interface in determining growth of PDIF-CN2 was further confirmed by TEM examination of PDIF-CN2 deposited onto unsupported SLG. (C) 2017 Elsevier B.V. All rights reserved.